Light source

ABSTRACT

The object of the invention is to provide light equipment which effectively utilizes the light emanating from a semiconductor luminous element and which can acquire clear and high-luminance light emission without a color dapple. The light equipment is configured as follows. Transparent resin in which wavelength converting material is mixed is provided on the reflecting surface of base material such as a case, a board and a lead frame, a transparent semiconductor luminous element is mounted, bonded and fixed on the transparent resin, the wavelength of light emitted from the back surface of the semiconductor luminous element is converted by the wavelength converting material, the converted light is reflected on the reflecting surface, the reflected light is mixed with light emitted from the surface of the semiconductor luminous element and the mixed light is radiated.

BACKGROUND OF THE INVENTION AND RELATED ART STATEMENT

[0001] The present invention relates to light equipment used for a lightsource of a liquid crystal display and others. Particularly, the presentinvention relates to light equipment wherein clear and high-luminanceemission without a color dapple can be acquired effectively utilizingthe light emanating from a semiconductor luminous element for a longterm.

[0002] A light emitting diode which is a semiconductor luminous elementis small-sized. Clear luminescent color can be efficiently acquiredwithout anxiety that a light bulb is burn-tout. The light emitting diodehas a characteristic that it is also excellent in a drive characteristicand is also strong in vibration and repetitive operation by switchingfor turning on and turning off. Therefore, the light emitting diode isutilized for a light source of various indicators and a liquid crystaldisplay.

[0003] Heretofore, for light equipment for indicative full color on aliquid crystal display and others, a light emitting diode (LED) lamp isknown. The LED lamp has semiconductor luminous elements each luminescentcolor of which is red, blue and green, that is, three semiconductorluminous elements of so-called RBG. The three semiconductor luminouselements are provided to a board as one unit.

[0004] Full color light equipment is also known. The full color lightequipment has three semiconductor luminous elements each luminescentcolor of which is red, blue and green are provided to one lead frame.

[0005] A light emitting diode used for this type of light equipment hasan excellent monochromatic peak wavelength. Therefore, in case lightequipment that emits white light is composed utilizing light emittingdiodes that respectively emit red light, green light and blue light forexample, the light emitting diodes that respectively emit each colorlight are required to be arranged closely to diffuse and mix each colorlight.

[0006] Concretely, to acquire light equipment that emits white light,three types of red, green and blue light emitting diodes or two types ofbluish green and yellow light emitting diodes are required. That is, toacquire light equipment that emits white light, light emitting diodes ofplural types different in luminescent color are required to be used.

[0007] In addition, a semiconductor light emitting diode chip hasnon-uniformity in a tone and luminance. In case plural light emittingdiodes are made of different material, the driving power of each lightemitting diode chip is different and a power source is required to beindividually secured.

[0008] Therefore, to acquire a white light emanating, current and otherssupplied every light emitting diode are required to be adjusted. Thereis a problem that a used light emitting diode is different in atemperature characteristic and aging and a tone also changes. Further,in case emission from each light emitting diode chip is not mixeduniformly, the light emanating may include irregular color and desiredwhite emission may not be acquired.

[0009] Particularly, in light equipment wherein three types ofsemiconductor luminous elements of red, blue and green luminescentcolors are provided on a board and are used as one unit, there is aproblem the light equipment is large-sized. In addition, as there isdistance between the semiconductor luminous elements, there is a problemthat it is difficult to acquire mixed color, mixed color hasnon-uniformity and face color of the one unit light equipment is coarse.

[0010] In light equipment in which three types of semiconductor luminouselements of red, blue and green luminescent colors are provided to onelead frame and others, to acquire white luminescent color, charge isrequired to be supplied to all semiconductor luminous elements includingred, blue and green. Therefore, there are a problem of large powerconsumption and energy conservation and a problem of space required by abattery in a portable (mobile) type.

[0011] Then, for light equipment in which the above-mentioned problemsare solved, light equipment disclosed in Japanese published unexaminedpatent applications No. Hei 7-99345, No. Hei 10-190066 and No. Hei10-242513 is known.

[0012] In the light equipment disclosed in Japanese published unexaminedpatent application No. Hei 7-99345, an LED chip is mounted at the bottomof a cup. Resin (a color converting member) including a fluorescentmatter (or a filter matter for partially absorbing the emissionwavelength of the luminous chip) for converting the emission wavelengthof the LED chip to another wavelength is filled inside the cup. Further,resin is provided so that the resin encircles the above-mentioned resin.

[0013] The light equipment disclosed in Japanese published unexaminedpatent application No. Hei 10-190066 is provided with an LED chip fixedon a board by a die bonding member and a color converting memberprovided on the LED chip. The color converting member includes afluorescent matter that absorbs at least a part of light emission fromthe LED chip, converts the wavelength and emits.

[0014] For the light equipment disclosed in Japanese publishedunexamined patent application No. Hei 10-242513, a pair of mount-leadsis provided with the light equipment. Front edge of one of mount-lead isin the form of a cup. An LED chip made of a gallium nitridesemiconductor is arranged in the cup. The LED chip is electricallyconnected via an inner lead with the other mount-lead. Transparent resinincluding a fluorescent matter is filled in the cup. In another lightequipment, a gallium nitride semiconductor chip is arranged in the bodyof the equipment and transparent resin including a fluorescent matter isfilled in the body.

[0015] The light equipment disclosed in the above-mentioned each patentapplication acquires another luminescent color from one type ofluminescent color of a semiconductor luminous element itself.Concretely, for a light emitting diode that converts the wavelength oflight emitted from an LED chip, white light emission is acquired bymixing light emission from a blue light emitting diode and lightemission from fluorophor that absorbs the above-mentioned light emissionand emits yellow light.

[0016] In the light equipment disclosed in the above-mentioned anypatent application, a color converting member is provided on an LEDchip. Therefore, in case white light is acquired, the dispersed light ofblue light radiated above the LED chip from the LED chip itself andyellow light converted by the color converting member provided on theLED chip looks to be white light for a human eye.

[0017] To acquire clear and high-luminance white light, thenon-uniformity and the distribution of blue light and yellow light arerequired to be uniform and fixed. However, in the configurationdisclosed in the above-mentioned each patent application, blue light isshielded by the color converting member on the LED chip. Luminance ofthe light equipment is determined by the composed light quantity oflight acquired by converting the color by the color converting memberand blue light radiated by the LED chip itself. Therefore, there is aproblem that the non-uniformity and the distribution of the colorconverting member are required to be uniform and luminance is notsatisfactory.

[0018] Apart from the color converting member including a fluorescentmatter for converting the wavelength of light from the LED chip, a diebonding member (a mounting member) for fixing a luminous chip or an LEDchip is required.

[0019] Further, the configuration disclosed in Japanese publishedunexamined patent application No. Hei 7-99345 has a problem that as asemiconductor luminous element is put in wavelength converting material,it is difficult to acquire mixed color.

[0020] Also, in the configuration disclosed in Japanese publishedunexamined patent application No. Hei 10-242513, a gallium nitridesemiconductor is arranged in a cup or the body of equipment. Afluorescent matter such as wavelength converting material is filled onthe semiconductor and on the four sides. Hereby, the fluorescent matteris uniformly dispersed in transparent resin. In addition, there is aproblem that it is difficult to control dispersed quantity or thethickness on the four sides and dispersed quantity or the thickness onthe surface. In addition to the configuration disclosed in theabove-mentioned each patent application, there is also known anotherconfiguration. In the configuration, a blue light emitting semiconductorluminous element is enveloped in the shape of a lamp by whole resinincluding wavelength converting material. Hereby, white luminescentcolor can be acquired by only a semiconductor luminous element lamp byconverting the wavelength of light emitted from the semiconductorluminous element to another wavelength.

[0021] However, in the above-mentioned configuration, the quantity ofused wavelength converting material is increased and the configurationhas a problem of the stability of the non-uniformity and thedistribution of the wavelength converting material.

[0022] As described above, light emission acquired in case theabove-mentioned conventional type light equipment is not enough to usefor a light source for a liquid crystal display and others. Therefore,high-luminance light emission (particularly, white light emission) inuse environment for a longer term has been desired.

[0023] The invention is made to solve the above-mentioned problems. Theinvention has an object of effectively utilizing the light emanatingfrom a semiconductor luminous element and acquiring clear andhigh-luminance light emission without a color dapple. The invention alsohas an object of providing light equipment that enables acquiringhigh-luminance light emission in use environment for a long term,compared with a conventional type.

SUMMARY OF THE INVENTION

[0024] Referring to the drawings corresponding to embodiments, theconfiguration of the invention to achieve the objects will be describedbelow. That is, light equipments 1A to 1L according to the invention areprovided on the reflecting surface of base material (a board 11 havingreflectivity, a lead frame 21, and, a pattern having reflectivity and anelectric wiring pattern in a case 7), are provided with transparentresin 3 in which wavelength converting material is mixed and atransparent semiconductor luminous element 4 provided on the transparentresin 3. In the light equipment, the wavelength of light emitted fromthe back surface 4 a of the semiconductor luminous element 4 isconverted by the wavelength converting material, the light thewavelength of which is converted is reflected on the reflecting surface,the reflected light and light directly emitted from the front surface 4b of the semiconductor luminous element 4 are mixed and the mixed lightis radiated from the front surface 4 b of the semiconductor luminouselement 4.

[0025] According to these light equipments, light radiated downward fromthe back surface 4 a of the semiconductor luminous element 4 isreflected upward again as light the wavelength of which is converted bythe wavelength converting material of the transparent resin 3. Hereby,the reflected light and direct radiated light emanating from thesemiconductor luminous element 4 are completed mixed and uniform lightcan be radiated upward from the front surface 4 b of the semiconductorluminous element 4.

[0026] Conductive material may be further mixed in the transparent resin3 in addition to the wavelength converting material. When thesemiconductor luminous element 4 is bonded and fixed on the transparentresin 3, static electricity can be prevented from being electrified inthe semiconductor luminous element 4 itself.

[0027] The light equipment according to a third aspect is characterizedin that the transparent resin 3 is formed in larger area than the areaof the semiconductor luminous element 4 on base material and thesemiconductor luminous element 4 is bonded and fixed on the transparentresin 3 on the base material.

[0028] According to the light equipment, light radiated downward fromthe back surface 4 a of the semiconductor luminous element 4 isreflected upward again as light the wavelength of which is converted bythe wavelength converting material of the transparent resin 3. Further,light radiated from the four sides 4 e of the semiconductor luminouselement 4 goes downward. And the radiated light is reflected againsubstantially upward as light the wavelength of which is converted bythe wavelength converting material of the transparent resin 3 providedin larger area than the area of the semiconductor luminous element 4.The reflected light and direct radiated light emanating from thesemiconductor luminous element 4 are completed mixed. Hereby, uniformlight can be radiated upward. The transparent resin 3 is provided inlarger area than the area of the semiconductor luminous element 4.Hereby, when the wavelength converting material mixed in the transparentresin 3 is applied or printed at fixed and uniform thickness, a mixedwhole tone can be controlled not by the thickness but by the area. Inaddition, the transparent resin 3 also functions as an adhesive and canfix the semiconductor luminous element.

[0029] Light equipment according to a fourth aspect is characterized inthat a concave portion (22, 25) is provided in base material,transparent resin 3 is filled in the concave portion (22, 25) and asemiconductor luminous element 4 is bonded and fixed on the transparentresin 3 filled in the concave portion (22, 25).

[0030] According to the light equipment, high-luminance light emissioncan be acquired, compared with a conventional type case that transparentresin in which fluorescent material is mixed is provided on asemiconductor luminous element. In addition, the semiconductor luminouselement 4 is bonded and fixed by the transparent resin 3 filled in theconcave portion (22, 25). Therefore, the transparent resin 3 alsofunctions as an adhesive, more light the wavelength of which isconverted is returned to the semiconductor luminous element 4 again andconvergency can be enhanced.

[0031] Light equipment according to a fifth aspect is characterized inthat the aperture area of a concave portion 22 is smaller than the areaof the back surface 4 a of a semiconductor luminous element 4.

[0032] According to the light equipment, direct light from thesemiconductor luminous element 4 and light the wavelength of which isconverted can be efficiently outgoing outside.

[0033] Light equipment according to a sixth aspect is characterized inthat the inner wall of a concave portion 25 is opposite to the side 4 eof a semiconductor luminous element 4 and is formed into an inclinedface 23 expanded from the bottom 25 a to the aperture.

[0034] According to the light equipment, light radiated downward fromthe back surface 4 a of the semiconductor luminous element 4 isreflected upward again as light the wavelength of which is converted bythe wavelength converting material of transparent resin 3. Further,light is radiated from the four sides 4 e of the semiconductor luminouselement 4 and goes sideway and downward. The radiated light is securelyreflected substantially upward again as light the wavelength of which isconverted by the wavelength converting material of the transparent resin3 formed on the inclined face 23 in each position corresponding to thefour sides 4 e of the semiconductor luminous element 4. The reflectedlight and direct radiated light outgoing from the semiconductor luminouselement 4 are completed mixed. Hereby, uniform light can be radiatedupward.

[0035] Light equipment according to a seventh aspect is characterized inthat an angle between the inclined face 23 of a concave portion 25 andthe bottom 25 a of the concave portion 25 is larger than 0° and is 45°or less.

[0036] According to the light equipment, a beam that goes sideway out oflight emanating from the directions of the four sides 4 e of thesemiconductor luminous element 4 is reflected substantially right over.A beam that goes slightly diagonally downward is reflected upward on thesubstantially inside of the semiconductor luminous element 4. A beamthat goes diagonally upward is reflected upward on the substantiallyoutside of the semiconductor luminous element 4. Therefore, the lightemanating from the directions of the four sides 4 e of the semiconductorluminous element 4 can be effectively utilized.

[0037] The form of the aperture of a concave portion 22 of the lightequipment may be also rectangular or circular depending upon the form ofthe semiconductor luminous element 4. Hereby, light from the backsurface 4 a of the semiconductor luminous element 4 can be effectivelyprojected onto the concave portion 22 in full and the machining is alsoeasy.

[0038] In case the concave portion 22 is machined by etching, a laserbeam or electric discharge, it can be precisely formed as an aperturewhich is minute and satisfactory in reflection efficiency. Therefore,the concave portion 22 which is smaller than the size of the backsurface 4 a of the semiconductor luminous element 4 can be provided.

[0039] The semiconductor luminous element 4 may be also bonded and fixedon the transparent resin 3 via a transparent adhesive 9. It is desirablethat the semiconductor luminous element 4 is used, a semiconductorluminous element wherein an active layer is arranged on a transparentboard and a transparent electrode is provided on the active layer.

[0040] For base material used for the light equipment, any of a board 11such as a ceramic board, a liquid crystal polymer resin board and aglass fiber epoxy resin board, a lead frame 21 and a case 7 havingreflectivity can be selectively used. Hereby, independent of a place andmaterial, a semiconductor luminous element is bonded and fixed anywhereand arbitrary mixed light such as white light can be acquired.

[0041] For the semiconductor luminous element 4, any of InGaAlP,InGaAlN, InGaN and GaN can be selectively used. Hereby, desired mixedlight can be acquired depending upon combination with wavelengthconverting material mixed in the transparent resin 3.

[0042] In the light equipment according to the invention, if wavelengthconverting material mixed in the transparent resin 3 is evenlydistributed without being dispersed when it is viewed as atwo-dimensional face, the light emanating from the semiconductorluminous element can be further effectively utilized, compared with theconventional type configuration that the transparent resin in whichfluorescent material is mixed is filled on the semiconductor luminouselement at random.

BRIEF DESCRIPTION OF THE DRAWINGS

[0043]FIG. 1 is a general drawing showing a first embodiment of lightequipment according to the invention;

[0044]FIG. 2 is a side sectional view of FIG. 1;

[0045]FIG. 3 shows one configuration of a semiconductor luminouselement;

[0046]FIG. 4 shows the result of the comparison of measured luminousintensity in conventional type configuration that transparent resin inwhich fluorescent material is mixed is provided on a semiconductorluminous element and in configuration according to the invention (lightequipment equivalent to the first embodiment) that transparent resin inwhich fluorescent material is mixed is bonded and fixed under asemiconductor luminous element or a semiconductor luminous element ismounted (bonded) on transparent resin in which fluorescent material ismixed;

[0047]FIG. 5 is a general drawing showing a second embodiment of thelight equipment according to the invention;

[0048]FIG. 6 is a partial sectional view showing a third embodiment ofthe light equipment according to the invention;

[0049]FIG. 7 is a partial sectional view showing a fourth embodiment ofthe light equipment according to the invention;

[0050]FIG. 8 is a partial sectional view showing a transformed exampleof the light equipment equivalent to the fourth embodiment;

[0051]FIG. 9 is a general drawing showing a fifth embodiment of thelight equipment according to the invention;

[0052]FIG. 10 is a partial sectional view showing a sixth embodiment ofthe light equipment according to the invention;

[0053]FIG. 11 is a partial sectional view showing a seventh embodimentof the light equipment according to the invention;

[0054]FIG. 12 is a partial sectional view showing a transformed exampleof the light equipment according to the invention;

[0055]FIG. 13 is a partial sectional view showing an eighth embodimentof the light equipment according to the invention;

[0056] FIGS. 14(a) to 14(c) are front views showing each concave portionprovided to a lead frame or a board formed by injection molding in thelight equipment equivalent to the eighth embodiment;

[0057]FIG. 15 is a perspective view showing a ninth embodiment of thelight equipment according to the invention;

[0058]FIG. 16 is a partial side sectional view showing the lightequipment equivalent to the ninth embodiment;

[0059]FIG. 17 is a partial sectional view showing a tenth embodiment ofthe light equipment according to the invention and is a side sectionalview showing the light equipment where an inclined face is provided to alead frame, a board or a case;

[0060]FIG. 18 shows the locus of light reflected on a reflecting surfaceafter the wavelength is converted by wavelength converting material oftransparent resin in the configuration of the tenth embodiment of thelight equipment according to the invention;

[0061]FIG. 19 is a partial side sectional view showing an eleventhembodiment of the light equipment according to the invention;

[0062]FIG. 20 is a partial side sectional view showing a transformedexample of the light equipment equivalent to the eleventh embodiment;

[0063]FIG. 21 is a partial side sectional view showing a twelfthembodiment of the light equipment according to the invention; and

[0064]FIG. 22 is a partial side sectional view showing a transformedexample of the light equipment equivalent to the twelfth embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0065] Embodiment 1

[0066] Referring to the attached drawings, the invention will bedescribed more detailedly below.

[0067] Light equipment according to the invention described below islight equipment using a transparent InGaAlP, InGaAlN, InGaN or GaNsemiconductor luminous element. Example, the semiconductor luminouselement is mounted on a reflective lead frame, a reflective board or areflective pattern and a reflective electric wiring pattern in a caseintermediating example via transparent resin in which wavelengthconverting material is mixed.

[0068]FIG. 1 is a general drawing showing a first embodiment of thelight equipment according to the invention. FIG. 2 is a side sectionalview of FIG. 1.

[0069] The light equipment 1 (1A) equivalent to the first embodimentshown in FIGS. 1 and 2 is formed by injection moulding or transfermoulding. This light equipment 1A is substantially composed of a pattern2 (2 a, 2 b), transparent resin 3, a semiconductor luminous element 4,bonding wire (hereinafter called wire) 5, a lead terminal 6 (6 a, 6 b)and a molding case (hereinafter called a case) 7. The pattern 2 in thisembodiment also includes an electric wiring pattern.

[0070] The pattern 2 (2 a, 2 b) is formed on a lead frame having apredetermined pattern form and made of phosphor bronze and others. Thecase 7 made of resin is inserted into the lead frame.

[0071] The transparent resin 3 is acquired by mixing wavelengthconverting material such as inorganic fluorescent pigment and organicfluorescent dye in transparent and colorless epoxy resin and others. Incase fluorescent material (YAG) is mixed in epoxy resin for example, theweight ratio of the epoxy resin and the fluorescent material isapproximately 1:3 to 1:4. This transparent resin 3 can be formed on thepattern 2 as a printed pattern by applying on the pattern 2 or byprinting fluorescent material mixed ink and others.

[0072] The transparent resin 3 is provided between the pattern 2 exposedat the bottom in a concave portion 7 a of the case 7 and the backsurface 4 a (the surface without an electrode) of the semiconductorluminous element 4. In an example shown in FIGS. 1 and 2, thetransparent resin 3 is provided in area substantially similar to theback surface 4 a of the semiconductor luminous element 4. Thistransparent resin 3 also functions as an adhesive cement for stickingthe semiconductor luminous element 4 on the pattern 2.

[0073] Further, in case a semiconductor luminous element that emits bluelight is used for the semiconductor luminous element 4, the transparentresin 3 is formed by resin in which wavelength converting materialincluding orange fluorescent pigment or orange fluorescent dye such asYttrium-Aluminum-Garnet (YAG) including CaSiO₃:Pb, Mn and (Y, Gd)₃(Al,Ga)₅O₁₂ is mixed. Hereby, yellow light is acquired by projecting bluelight from the semiconductor luminous element 4 onto the resin in whichwavelength converting material including orange fluorescent pigment ororange fluorescent dye is mixed. When yellow light acquired by colorconversion by the wavelength converting material of the transparentresin 3 and blue light radiated by the semiconductor luminous element 4itself are mixed, light radiated upward from the front surface 4 b ofthe semiconductor luminous element 4 itself becomes white light.

[0074] Also, in case a semiconductor luminous element that emits greenlight for example is used for the semiconductor luminous element 4, thetransparent resin 3 is formed by resin in which wavelength convertingmaterial including red fluorescent pigment or red fluorescent dye ismixed. Hereby, yellow light is acquired by projecting green light fromthe semiconductor luminous element 4 onto the resin in which thewavelength converting material including red fluorescent pigment or redfluorescent dye is mixed.

[0075] Further, in case the transparent resin 3 is formed by resin inwhich wavelength converting material including green fluorescent pigmentor green fluorescent dye is mixed when a semiconductor luminous elementthat emits blue light is used for the semiconductor luminous element 4,bluish green light is acquired by projecting blue light from thesemiconductor luminous element 4 onto the resin in which the wavelengthconverting material including green fluorescent pigment or greenfluorescent dye is mixed.

[0076] The transparent resin 3 may be such resin that acquired by mixingwavelength converting material including inorganic fluorescent pigmentor organic fluorescent dye and others and conductive material intransparent and colorless epoxy resin.

[0077] The conductive material in this case is mixed at limit at whichfiller such as a silver particle does not have a bad effect uponfluorescent material. The conductive material has a high resistancevalue at degree at which the positive electrode and the negativeelectrode of the semiconductor luminous element 4 itself are notshort-circuited at low charge.

[0078] Even if higher potential static electricity than applied voltageand others are electrified in the whole semiconductor luminous element4, the static electricity and others are made to flow to the ground byadding conductive material to the semiconductor luminous element 4 thecharge of which is high by minute quantity. Hereby, the InGaAlP,InGaAlN, InGaN or GaN semiconductor luminous element 4 itself which isweak in static electricity is protected from static electricity andothers.

[0079] Concretely, the volume resistivity of conductive material inresin in which fluorescent material is mixed is approximately 150 to 300kΩ. The forward resistance of the semiconductor luminous element 4 is165 Ω and the peak inverse resistance is 2.5 MΩ. Hereby, the resistanceof the conductive material is resistance at degree at which current doesnot leak out into the semiconductor luminous element 4 and has a lowervalue than the peak inverse resistance. Therefore, current is made toflow to the ground and static electricity can be prevented from beingelectrified in the semiconductor luminous element 4 itself.

[0080] The semiconductor luminous element 4 is a luminous element formedby an InGaAlP, InGaAlN, InGaN or GaN semiconductor chip having doubleheterostructure with active layers on an N-type board in the center andis manufactured by organometal vapor phase epitaxy.

[0081] The board of the semiconductor luminous element 4 itself is atransparent board 31 made of Al₂O₃ or indium phosphide sapphire. Asshown in FIG. 3, an active layer 32 is provided on the transparent board31. A transparent electrode 33 is formed on the active layer 32. Theelectrode provided to the semiconductor luminous element 4 is producedby generating a conductive transparent electrode made of In₂O₃, SnO₂ orITO by sputtering, vacuum evaporation or chemical vapor deposition.

[0082] The semiconductor luminous element 4 has an anode and a cathodeon one surface (the upper surface shown in FIG. 2: the front surface 4b). The other surface (the lower surface shown in FIG. 2: the backsurface 4 a) without an electrode of the semiconductor luminous element4 is mounted and fixed on the transparent resin 3. The anode and thecathode of the semiconductor luminous element 4 are respectively bondedto the patterns 2 a and 2 b by wire 5.

[0083] The wire 5 is made of conductive wire such as gold wire. Thiswire 5 electrically connects the anode of the semiconductor luminouselement 4 and the pattern 2 a, and the cathode and the pattern 2 brespectively owing to a bonder.

[0084] The lead terminal 6 (6 a, 6 b) is formed by directly pulling aconductive and elastic lead frame made of a copper alloy such asphosphor bronze out of the case 7. The lead terminal 6 a is electricallyconnected to the anode of the semiconductor luminous element 4 via thepattern 2 a. Hereby, the lead terminal 6 a is used for an anode (apositive electrode) as the light equipment 1 (1A) according to theinvention.

[0085] The lead terminal 6 b is electrically connected to the cathode ofthe semiconductor luminous element 4 via the pattern 2 b. Hereby, thelead terminal 6 b is used for a cathode to (a negative electrode) as thelight equipment 1 (1A) according to the invention.

[0086] The case 7 is molded in a concave form by mixing white powdersuch as barium titanate in insulating material such as a liquid crystalpolymer made of transformed polyamide, polybutylene terephthalate oraromatic polyester. The pattern 2 is exposed at the bottom of theconcave portion 7 a of this case 7.

[0087] The case 7 efficiently reflects light from the side of thesemiconductor luminous element 4 by white powder such as barium titanateexcellent in the reflectivity of light and a light shielding property.The case 7 makes the reflected light emanating upward by a taperedconcave face 7 b of the concave portion 7 a shown in FIG. 2. The case 7shields light so that light emitted by the light equipment 1 (1A)according to the invention does not leak outside.

[0088] Further, as shown in FIG. 2, in the concave portion 7 a of thecase 7, a colorless and transparent protective layer 8 made of epoxyresin and others is filled to protect the pattern 2, the semiconductorluminous element 4, the wire 5 and others.

[0089] In the light equipment 1 (1A) configured as described above, thesemiconductor luminous element 4 that emits blue light is used. For thetransparent resin 3, resin in which wavelength converting material (orwavelength converting material and conductive material) made of orangefluorescent pigment or orange fluorescent dye is (are) mixed is used.Hereby, clear and high-luminance white light can be acquired.

[0090] That is, blue light is radiated from the upward of thesemiconductor luminous element 4. And blue light radiated downward fromthe semiconductor luminous element 4 is converted to yellow light by thewavelength converting material of the transparent resin 3. The convertedyellow light is radiated upward and downward the transparent resin 3.The yellow light radiated downward the transparent resin 3 is reflectedon the surface of the pattern 2 a under the transparent resin and isradiated upward. The blue light radiated by the semiconductor luminouselement 4 itself and the yellow light converted by the wavelengthconverting material of the transparent resin 3 are mixed. And whitelight is radiated from the upward of the semiconductor luminous element4.

[0091] The luminous intensity measured in conventional typeconfiguration that transparent resin in which fluorescent material ismixed is provided on a semiconductor luminous element and in theconfiguration according to the invention (the light equipment equivalentto the first embodiment) that the transparent resin in which thefluorescent material is mixed is bonded and fixed under thesemiconductor luminous element or that the semiconductor luminouselement is mounted (bonded) on the transparent resin in which thefluorescent material is mixed respectively of light equipment. In thiscase, the light equipments respectively installed in an element type(L1800) manufactured by this company under the following condition, andare compared. FIG. 4 shows a table including the result of themeasurement.

[0092] Used chip: E1C10-1B001 (BL chip manufactured by Toyoda Gosei Co.,Ltd.)

[0093] Used fluorescent material: YAG81004 (manufactured by NEMOTO &CO., LTD), Used resin: Epoxy resin (same material as conventional typeand this embodiment)

[0094] Specification: Conventional type (Fluorescent material isprovided on semiconductor luminous element), Type in this embodiment(Fluorescent material is provided under semiconductor luminous element)

[0095] Measurement condition: Luminous intensity when current per chipis 10 mA is measured

[0096] Measured number: Each 13 pieces

[0097] Measurement equipment: LED tester

[0098] As clear from the table shown in FIG. 4, it is known that in theconfiguration of the invention, the average luminous intensity isenhanced by approximately 32.5%, compared with that in the conventionaltype configuration.

[0099] Embodiment 2

[0100]FIG. 5 is a general drawing showing a second embodiment of thelight equipment according to the invention. The same number is allocatedto the substantially similar component to that of the light equipment 1Aequivalent to the first embodiment and the detailed description isomitted.

[0101] Light equipment 1B (1) equivalent to the second embodiment shownin FIG. 5 is a chip type. This light equipment 1B is composed of a board11, a pattern 2 (2 a, 2 b), transparent resin 3, a semiconductorluminous element 4, wire 5 , a terminal electrode 16 (16 a, 16 b) andthe light emanating mold 17. The pattern 2 in this embodiment alsoincludes an electric wiring pattern.

[0102] The board 11 is a board excellent in electric insulation, such asa ceramic board, a liquid crystal polymer resin board and a glass fiberepoxy resin board. The pattern 2 (2 a, 2 b) is formed on a surface ofthe board 11.

[0103] The board 11 made of a ceramic board for example is made of acompound having AlO or SiO as a principal component and furtherincluding ZrO, TiO, TiC, SiC or SiN. This ceramic board is excellent inheat resistance, hardness and strength, has a white surface andefficiently reflects light emitted from the semiconductor luminouselement 4.

[0104] The board 11 made of liquid crystal polymer resin and glass fiberepoxy resin is formed by mixing or applying white powder such as bariumtitanate into insulating material such as a liquid crystal polymer andglass fiber epoxy resin. Therefore, light emitted from the semiconductorluminous element 4 is efficiently reflected.

[0105] For the board 11, pattern printing may be also applied to alaminated plate made of silicon resin, paper epoxy resin, syntheticfiber epoxy resin and paper phenol resin and a plate made of transformedpolyimide, polybutylene terephthalate, polycarbonate and aromaticpolyester so as to efficiently reflect light emitted from thesemiconductor luminous element 4. In addition, metal such as aluminummay be also deposited and a film in which metal foil is laminated orsheet metal may be also stuck so as to provide a reflecting surface.

[0106] The pattern 2 (2 a, 2 b) is formed on the board 11 made of any ofa ceramic, liquid crystal polymer resin and glass fiber epoxy resin byvacuum evaporation, sputtering, ion plating, chemical vapor deposition(CVD) and etching (wet etching, dry etching) in the shape of a patternfor electric connection. Further, after metal plating is applied to thesurface of the pattern 2, the plating of noble metal such as gold andsilver is further applied and the pattern is electrically connected tothe terminal electrode 16 (16 a, 16 b).

[0107] The transparent resin 3 is provided between the pattern 2 on theboard 11 and the back surface 4 a (the surface without an electrode) ofthe semiconductor luminous element 4. As shown in an example shown inFIG. 5, the transparent resin 3 is provided in the substantially similararea to the area of the back surface 4 a of the semiconductor luminouselement 4. This transparent resin 3 also functions as an adhesive forsticking the semiconductor luminous element 4 to the pattern 2.

[0108] The semiconductor luminous element 4 has an anode and a cathodeon one surface (the upper surface shown in FIG. 5: the front surface 4b). And the other surface without an electrode (the lower surface shownin FIG. 5: the back surface 4 a) is stuck by the transparent resin 3.The anode and the cathode of the semiconductor luminous element 4 arerespectively bonded to the patterns 2 a and 2 b by the wire 5.

[0109] The terminal electrode 16 (16 a, 16 b) is formed by thicklyplating metal satisfactory in electric conduction on the end of theboard 11 or mechanically attaching conductive and elastic phosphorbronze and others.

[0110] The terminal electrode 16 a is electrically connected to theanode of the semiconductor luminous element 4 via the pattern 2 a.Hereby, the terminal electrode 16 a is used for an anode (a positiveelectrode) of the light equipment 1 (1B) according to the invention.

[0111] The terminal electrode 16 b is electrically connected to thecathode of the semiconductor luminous element 4 via the pattern 2 b.Hereby, the terminal electrode 16 b is used for a cathode (a negativeelectrode) of the light equipment 1 (1B) according to the invention.

[0112] The light emanating mold 17 is molded in a rectangular shape bycolorless and transparent epoxy resin. The light emanating mold 7efficiently radiates light from a luminescent layer (the upper electrodeside and four sides) of the semiconductor luminous element 4. The lightemanating mold 17 protects the pattern 2, the semiconductor luminouselement 4 and the wire 5.

[0113] Though the light emanating mold 17 is not shown, it can be formedin a free shape suitable for a purpose and a specification such as adome for converging light in one direction.

[0114] In the light equipment 1 (1B) configured as described above, thesemiconductor luminous element 4 that emits blue light is used. For thetransparent resin 3, resin in which wavelength converting material (orwavelength converting material and conductive material) including orangefluorescent pigment or orange fluorescent dye is (are) mixed is used.Hereby, clear and high-luminance white light can be acquired.

[0115] That is, blue light is radiated from the upward of thesemiconductor luminous element 4. And blue light radiated under thesemiconductor luminous element 4 is converted to yellow light by thewavelength converting material of the transparent resin 3. The convertedyellow light is radiated upward and downward the transparent resin 3.The yellow light radiated below the transparent resin 3 is reflected onthe surface of the lead 2 a under the transparent resin and is radiatedupward. Blue light radiated by the semiconductor luminous element 4itself and yellow light converted by the wavelength converting materialof the transparent resin 3 are mixed. White light is radiated from theupward of the semiconductor luminous element 4.

[0116] Embodiment 3

[0117]FIG. 6 is a partial sectional view showing a third embodiment ofthe light equipment according to the invention. The same number isallocated to the similar component to that of the light equipment 1Aequivalent to the first embodiment and the light equipment 1B equivalentto the second embodiment and the detailed description is omitted.

[0118] In light equipment 1C (1) shown in FIG. 6, a semiconductorluminous element 4 is stuck on a part in which no pattern 2 (2 a, 2 b)on case 7 or a board 11 is formed via transparent resin 3. Concretely,the semiconductor luminous element 4 is stuck via the transparent resin3 in a part (including an insulating pattern) between the pattern 2 aand the pattern 2 b respectively exposed at the bottom of a concaveportion 7 a of the case 7 or in a part (including an insulating pattern)between the patterns 2 a and 2 b on the board 11. The anode and thecathode of the semiconductor luminous element 4 are respectively bondedto the patterns 2 a and 2 b by wire 5.

[0119] Embodiment 4

[0120]FIG. 7 is a partial sectional view showing a fourth embodiment ofthe light equipment according to the invention. FIG. 8 is a partialsectional view showing a transformed example of the light equipmentequivalent to the fourth embodiment. The same number is allocated to thesimilar component to that of the light equipment 1A equivalent to thefirst embodiment and the light equipment 1B equivalent to the secondembodiment and the detailed description is omitted.

[0121] In light equipment 1D (1) shown in FIG. 7, a semiconductorluminous element 4 is stuck via transparent resin 3 across betweenpatterns 2 a and 2 b respectively exposed at the bottom of a concaveportion 7 a inside of a case 7 or across between the patterns 2 a and 2b on a board 11. The anode and the cathode of the semiconductor luminouselement 4 are respectively bonded to the patterns 2 a and 2 b by wire 5.At that time, for the transparent resin 3, an insulating member in whichwavelength converting material not including conductive material ismixed is used.

[0122] In case transparent resin in which conductive material andwavelength converting material are mixed is used, the transparent resin3 is mounted so that it is in contact with only the negative pattern 2as shown in FIG. 8, is grounded and the semiconductor luminous element 4is stuck on the transparent resin 3.

[0123] Embodiment 5

[0124]FIG. 9 is a partial sectional view showing a fifth embodiment ofthe light equipment according to the invention. The same number isallocated to the similar component to that of the light equipment 1Aequivalent to the first embodiment and the light equipment 1B equivalentto the second embodiment and the detailed description is omitted.

[0125] In light equipment 1E (1) shown in FIG. 9, a semiconductorluminous element 4 is stuck via transparent resin 3 in a concave portion7 a formed in a part on a case 7 or a board 11 in which no pattern 2 a ,2 b is formed. Concretely, the semiconductor luminous element 4 is stuckvia the transparent resin 3 in a concave portion 7 a of the case 7 or atthe bottom and on the peripheral surface of a concave portion 11 aformed in the board 11.

[0126] The anode and the cathode of the semiconductor luminous element 4are respectively bonded to the patterns 2 a and 2 b by wire 5. Accordingto this configuration, after the wavelength of light radiated from theback surface and four sides of the semiconductor luminous element 4 isconverted via the transparent resin 3, it is reflected in the concaveportion 7 a or in the concave portion 11 a and is returned to thesemiconductor luminous element 4 again. Light in which light thewavelength of which is converted and light from the semiconductorluminous element 4 itself are mixed is radiated from the front surface 4b of the semiconductor luminous element 4.

[0127] Embodiment 6

[0128]FIG. 10 is a partial sectional view showing a sixth embodiment ofthe light equipment according to the invention. The same number isallocated to the similar component to that of the light equipment 1Aequivalent to the first embodiment and the light equipment 1B equivalentto the second embodiment and the detailed description is omitted.

[0129] Light equipment 1F (1) shown in FIG. 10 is based upon theconfiguration of the light equipment 1E shown in FIG. 9 and only thelower surface of a semiconductor luminous element 4 is stuck viatransparent resin 3 in a concave portion 7 a of a case 7 or in a concaveportion 11 a of a board 11.

[0130] Embodiment 7

[0131]FIG. 11 is a partial sectional view showing a seventh embodimentof the light equipment according to the invention. The same number isallocated to the similar component to that of the light equipment 1Aequivalent to the first embodiment and the light equipment 1B equivalentto the second embodiment and the detailed description is omitted.

[0132] Light equipment 1G (1) shown in FIG. 11 is based upon theconfiguration of the light equipment 1E shown in FIG. 9 and asemiconductor luminous element 4 is stuck via transparent resin 3 sothat the whole is located in a concave portion 7 a (or 11 a). In theabove-mentioned light equipment, the transparent resin 3 also functionsas an adhesive. As shown in FIG. 12, a transparent adhesive 9 is appliedon the transparent resin 3 and the semiconductor luminous element 4 maybe also fixed on the transparent adhesive 9.

[0133] At that time, the used transparent adhesive is made of liquidcyanoacrylate the viscosity of which is low. Hereby, differently from anadhesive made of epoxy resin, the semiconductor luminous element 4 canbe instantaneously bonded and fixed without heat and without having abad effect upon the semiconductor luminous element 4. In addition, noheat is required for the adhesive to harden and as bonding speed isfast, the adhesive is advantageous in productivity and economy.

[0134] In FIG. 12, configuration in which the transparent adhesive 9 isused in the light equipment 1C equivalent to the third embodiment isshown, however, the configuration can be also applied to the lightequipment equivalent to another embodiment described in relation to thisembodiment.

[0135] In case transparent resin acquired by mixing wavelengthconverting material (wavelength converting material and conductivematerial) in a transparent adhesive made of cyanoacrylate the viscosityof which is high is used for the transparent resin 3, a printing processand a bonding process can be executed once.

[0136] In case the transparent resin 3 is formed by resin in whichorange fluorescent pigment or orange fluorescent dye is mixed in theabove-mentioned configuration shown in FIGS. 6 to 12 and a semiconductorluminous element that emits blue light is used for the semiconductorluminous element 4, light radiated downward the semiconductor luminouselement 4 is converted to yellow light by wavelength converting materialof the transparent resin 3. The yellow light is radiated to thesemiconductor luminous element 4, is also radiated downward, the yellowlight radiated downward is reflected in the lower part (in a case 7, ona board 11 and on the bonded surfaces of a pattern 2 a and others andthe transparent resin 3) and is returned to the semiconductor luminouselement 4. Further, the yellow light is mixed with blue light radiateddirectly upward from the semiconductor luminous element 4. Hereby, whitelight can be radiated from the upper surface of the semiconductorluminous element 4.

[0137] Embodiment 8

[0138]FIG. 13 is a partial sectional view showing an eighth embodimentof the light equipment according to the invention. FIGS. 14(a) to 14(c)are front views respectively showing a concave portion provided to alead frame formed by injection molding or a board in light equipmentequivalent to the eighth embodiment. The same number is allocated to thesimilar component to that of the light equipment 1A equivalent to thefirst embodiment and the light equipment 1B equivalent to the secondembodiment and the detailed description is omitted.

[0139] Light equipment 1H (1) shown in FIG. 13 is provided with a leadframe 21, transparent resin 3, a semiconductor luminous element 4, wire5 and a case 7. The lead frame 21 is formed by a metallic thin platemade of conductive and elastic aluminum and others. The lead frame 21 isformed by a punching press so that multiple units as one unit includingplural mounting patterns 21 a for mounting the semiconductor luminouselement 4, a wiring pattern 21 b for electrically connecting to thesemiconductor luminous element 4, plural lead terminals not shown and asupporting frame not shown are arranged in parallel.

[0140] As shown in FIG. 13, in the mounting pattern 21 a of the leadframe 21, a concave portion 22 smaller than the size of the back surface4 a of the semiconductor luminous element 4 is minutely formed in aposition in which the semiconductor luminous element 4 is mounted. Theconcave portion 22 is formed by etching, laser beam machining orelectrical discharge machining.

[0141] In case phosphor bronze slightly inferior in reflectivity is usedfor the lead frame 21, the plating of silver and others is applied tothe lead frame to enhance reflection efficiency. The reason whyreflection efficiency is enhanced is that the light emanating from theback surface 4 a of the semiconductor luminous element 4 is reflectedand is lead in the direction of the front surface 4 b of thesemiconductor luminous element 4 or upward outside the sides 4 e of thesemiconductor luminous element 4 again.

[0142] The mounting pattern 21 a of the lead frame 21 is connected tothe anode (or the cathode) of the semiconductor luminous element 4 viathe wire 5. The wiring pattern 21 b of the lead frame 21 is a patternfor electric connection without mounting the semiconductor luminouselement 4. The wiring pattern 21 b is connected to the cathode (or theanode) of the semiconductor luminous element 4 via the wire 5.

[0143] The lead frame 21 is formed by the insertion molding of thebottom face of the mounting pattern 21 a and the wiring pattern 21 binto the case 7 so that the patterns are insert symmetrically by ametallic mold not shown.

[0144] The lead frame 21 is provided with a supporting frame not shownformed by insertion molding. The lead frame 21 holds the whole frametill a process including the mounting and bonding of a chip such as thesemiconductor luminous element 4, the bonding of the wire 5 and thefilling of the transparent resin 3. For the lead frame 21, only the leadterminal not shown is finally left and the rest is cut and removed.

[0145] The concave 22 is minutely worked by etching, laser beammachining or electrical discharge machining and is formed so that it issmaller than the size of the back surface 4 a of the semiconductorluminous element 4.

[0146] The concave portion 22 is respectively formed in a rectangularshape 22 a shown in FIG. 14(a), in a circular shape 22 b shown in FIG.14(b) and in the shape of light emission 22 c shown in FIG. 14(c) fromthe back surface 4 a of the semiconductor luminous element 4. 14(c). Thetransparent resin 3 is filled in the concave portion 22 and thesemiconductor luminous element 4 is mounted on the transparent resin 3.

[0147] As shown FIG. 13, a chip of the semiconductor luminous element 4is mounted on the transparent resin 3 filled in the concave portion 22.The wire 5 bonds an electrode 4 c and the mounting pattern 21 a of thelead frame 21. The wire 5 bonds an electrode 4 d and the wiring pattern21 b of the lead frame 21. Hereby, electric connection is made.

[0148] Particularly in case the shape of the electrode of thesemiconductor luminous element 4 is arranged in the center of the rightend and the left end of the chip, the transparent resin 3 is filled inthe concave portion 22 c shown in FIG. 14(c) and having the similarshape to the shape of light emission from the back surface 4 a of thesemiconductor luminous element 4. The semiconductor luminous element 4is mounted on the transparent resin 3.

[0149] In case conductive transparent metal such as In₂O₃, SnO₂and ITOis formed as electrodes (an anode and a cathode) 4 c and 4 d on thesemiconductor luminous element 4 by a method such as sputtering, vacuumevaporation and chemical vapor deposition, light emanatings from theback surface 4 a of the semiconductor luminous element 4 are in asubstantially rectangular shape. In this case, the transparent resin 3is filled in the concave portion 22 a shown in FIG. 14(a) and thesemiconductor luminous element 4 may be also mounted on it. Thetransparent resin 3 is filled in the circular concave portion 22 b shownin FIG. 14(b) depending upon quantity productivity and workability andthe semiconductor luminous element 4 may be also mounted on it.

[0150] The transparent resin 3 is filled in the concave portion 22 (22a, 22 b, 22 c) shown in FIGS. 14(a) to 14(c). The wavelength of thelight emanating from the back surface 4 a of the semiconductor luminouselement 4 is converted. The light emanating the wavelength of which isconverted is reflected in a metallic part of the concave portion 22. Inthe meantime, light radiated downward the semiconductor luminous element4 is converted in color in the transparent resin 3. The light the colorof which is converted is radiated upward the semiconductor luminouselement 4 and is reflected in the lower part (by the case 7, the board11 and the bonded surfaces of the pattern 2 a and the transparent resin3). The reflected light is also transmitted in the semiconductorluminous element 4 and is radiated upward the semiconductor luminouselement 4. The radiated light is mixed with light directly radiatedupward from the semiconductor luminous element 4.

[0151] For example, in case a semiconductor luminous element that emitsblue light is used for the semiconductor luminous element 4 and rein inwhich wavelength converting material including orange fluorescentpigment or orange fluorescent dye is mixed is used for the transparentresin 3, blue light radiated downward the semiconductor luminous element4 is converted to yellow light in the transparent resin 3. The convertedyellow light is radiated upward the semiconductor luminous element 4.Simultaneously, after the yellow light is radiated downward thesemiconductor luminous element 4, it is reflected at the bottom of theconcave portion 22. The yellow light reflected in the concave portion 22is also transmitted in the semiconductor luminous element 4 and isradiated upward the semiconductor luminous element 4. The yellow lightdirected to the semiconductor luminous element 4 and blue light directlyradiated upward from the semiconductor luminous element 4 in these twoprocesses are completely mixed. Therefore, uniform white light isradiated above the semiconductor luminous element 4. Hereby, clear andhigh-luminance white light can be acquired.

[0152] As the proper luminescent color transmitted in the epoxy resin inthe transparent resin 3 of the semiconductor luminous element 4 andluminescent color acquired by converting the wavelength in thetransparent resin 3 are mixed, a tonality shown in a chromaticitydiagram and others can be acquired depending upon ratio in whichcolorless and transparent epoxy resin and silicone resin are mixed anddispersed.

[0153] For example, when light from the semiconductor luminous element 4that emits blue light is projected onto the transparent resin 3 in whichorange fluorescent pigment or orange fluorescent dye is mixed, whitelight is acquired by the mixture of the blue light and the orange light.In case the transparent resin 3 is included in large quantity, light inwhich an orange tone is deep is acquired. In case the transparent resin3 is included in small quantity, light in which a blue tone is deep isacquired. However, when density distribution is large even if thetransparent resin 3 is included by the same quantity, the quantity oflight the wavelength of which is converted and which is returned to thesemiconductor luminous element 4 again increases. Therefore, the most oflight radiated from the semiconductor luminous element 4 is wavelengthconverted light from the surface of the transparent resin 3.

[0154] Then, in the light equipment 1H shown in FIG. 13, the concaveportion 22 is provided, the quantity of the transparent resin 3including wavelength converting material required for white light ismaintained, and colorless and transparent epoxy resin and silicone resinare made to exist between particles of wavelength converting material ofthe transparent resin 3. Hereby, light the wavelength of which isconverted in the transparent resin 3 reaches the bottom surface of theconcave portion 22. The reflected light by the concave portion 22 passesbetween the particles of the wavelength converting material of thetransparent resin 3. Therefore, reflection effect is prevented frombeing lost by returning the reflected light to the semiconductorluminous element 4 again.

[0155] The wire 5 electrically connects the anode 4 c of thesemiconductor luminous element and the mounting pattern 21 a with theassistance of a bonder. Also, the wire 5 electrically connects thecathode 4 d of the semiconductor luminous element 4 and the wiringpattern 21 b with the assistance of a bonder.

[0156] Though now shown, the lead frame 21 (21 a, 21 b) is connected toa lead terminal made of a conductive and elastic copper alloy such asphosphor bronze or aluminum to pull out it outside. In anotherconfiguration, the lead frame may be pulled out of the case 7 encirclingthe whole as a lead terminal as it is.

[0157] Further, the case 7 shown in FIGS. 14(a) to 14(c) is formed byinjection molding, inserting the lead frame 21 (21 a, 21 b) and others,pressing the case.

[0158] In the above-mentioned example, it is described that the concaveportion 22 (22 a, 22 b, 22 c) is formed in the lead frame 21 (21 a, 21b), the transparent resin 3 including wavelength converting material isfilled in the concave portion 22 and the semiconductor luminous element4 is mounted on it. The board having a reflecting surface in a part inwhich the semiconductor luminous element 4 is mounted is also described.In this case, the concave portion 22 smaller than the size of the backsurface 4 a of the semiconductor luminous element 4 is provided to theboard. The transparent resin 3 including wavelength converting materialis filled in the concave portion 22. The semiconductor luminous element4 is mounted on it.

[0159] However, in case the board is used in place of the lead frame 21,when the board is made of insulating material such as glass fiber epoxyresin for example after the concave portion 22 is formed in the board byetching, laser beam machining or electrical discharge machining, theplating of silver and others is applied to the concave portion 22 andthe reflecting surface is formed. Hereby, reflection efficiency isenhanced.

[0160] An example of the light equipment 1H equivalent to the eighthembodiment will be described below.

[0161] (Y, Gd)₃(Al, Ga)₅O₁₂:Ce is fluorescent pigment such as YAG. Theratio of the atomic weight of (Y, Gd)₃(Al, Ga)₅O₁₂of (Y, Gd)₃(Al,Ga)₅O₁₂:Ce and Ce of (Y, Gd)₃(Al, Ga)₅O₁₂:Ce is variously changed. Whenthis ratio was 1:4, wavelength converted material is further used. Thewavelength converted material includes fluorescent pigment and epoxyresin. Average grain size of the fluorescent pigment is set toapproximately 8 μm. The epoxy resin is colorless and transparent. Thefluorescent pigment and the epoxy resin are respectively adjusted to 1:1in ratio by weight and mixed. Hereby, white light could be acquired byorange luminescent color by the wavelength converted material and theluminescent color of the semiconductor luminous element that emits bluelight.

[0162] In this example, higher average luminance was acquired in thecase of the light equipment 1H wherein the concave portion 22 isprovided to a position in this embodiment in which the semiconductorluminous element 4 is mounted and the transparent resin 3 is filled inthe concave portion 22 by fixed quantity, compared with a case that thetransparent resin 3 is applied to the semiconductor luminous element 4.

[0163] Embodiment 9

[0164]FIG. 15 is a schematic perspective view showing a ninth embodimentof the light equipment according to the invention. FIG. 16 is a partialside sectional view showing light equipment equivalent to the ninthembodiment. The same number is allocated to the similar component tothat of the light equipment 1H equivalent to the eighth embodiment andthe detailed description is omitted.

[0165] The light equipment 1I (1) equivalent to the ninth embodimentshown in FIGS. 15 and 16 is provided with a lead frame 21, transparentresin 3, a semiconductor luminous element 4 and a case 7.

[0166] The transparent resin 3 of the light equipment 11 is always keptfixed quantity by application or printing. The transparent resin 3 isprovided in a large range around the outside of the semiconductorluminous element 4 having larger area than area 24 in which thesemiconductor luminous element 4 is mounted. The large range in whichresin 3 is provided includes the area 24 on a wiring pattern 21 a inwhich the semiconductor luminous element 4 is mounted (equivalent to thearea of the back surface 4 a of the semiconductor luminous element 4) onthe lead frame 21 as shown in FIG. 15. Hereby, light radiated from theback surface 4 a of the semiconductor luminous element 4 can be moreefficiently converted in color. And even if the quantity of wavelengthconverting material by printing and others is small, an optimum tonalitycan be acquired.

[0167] The transparent resin 3 converts the wavelength of the lightemanating from the back surface 4 a of the semiconductor luminouselement 4. The light the wavelength of which is converted is radiatedtoward the semiconductor luminous element 4 and is reflected in thelower part (on the bonded surfaces of the wiring pattern 21 a and thetransparent resin 3). The reflected light is also radiated upward thesemiconductor luminous element 4. The reflected light is mixed withlight directly radiated upward from the semiconductor luminous element4.

[0168] For example, a semiconductor luminous element that emits bluelight is used for the semiconductor luminous element 4. Resin in whichwavelength converting material including orange fluorescent pigment ororange fluorescent dye is mixed is used for the transparent resin 3.Hereby, blue light radiated upward the semiconductor luminous element 4is converted to yellow light in the transparent resin 3 by wavelengthconversion.

[0169] The converted yellow light is radiated toward the semiconductorluminous element 4 located on the transparent resin 3. Simultaneously,the yellow light is reflected on the wiring pattern 21 a of the leadframe 21. The yellow light reflected on the wiring pattern 21 a of thelead frame 21 is also radiated upward the semiconductor luminous element4. The yellow light directed to the semiconductor luminous element 4 andblue light directly radiated upward from the semiconductor luminouselement 4 are completed mixed in these two processes. Therefore, uniformwhite light is radiated from the upside of the semiconductor luminouselement 4. Hereby, clear and high-luminance white light can be acquired.

[0170] Embodiment 10

[0171]FIG. 17 is a partial sectional view showing a tenth embodiment ofthe light equipment according to the invention. FIG. 18 shows the locusof the light emanating on an inclined face from a semiconductor luminouselement in light equipment equivalent to the tenth embodiment. The samenumber is allocated to the similar component to that of the lightequipment 1H equivalent to the eighth embodiment and the detaileddescription is omitted.

[0172] The light equipment 1J (1) equivalent to the tenth embodimentshown in FIG. 17 is provided with a lead frame 21, transparent resin 3,a semiconductor luminous element 4 and a case 7 as in the lightequipment 11 equivalent to the ninth embodiment.

[0173] The light equipment 1J (1) is different from the light equipment11 in that an inclined face 23 is provided in a position on the leadframe 21 respectively opposite to four sides 4 e of the semiconductorluminous element 4.

[0174] To explain further detailedly, the inclined face 23 is providedfrom the contour position of the back surface 4 a of the semiconductorluminous element 4 shown in FIG. 18 or the outside of the contourposition of the back surface 4 a of the semiconductor luminous element 4shown in FIG. 17 to the top so that the inclined face extends outside.

[0175] It is desirable that an angle θ between the inclined face 23 anda virtual extended line (an L-L line shown by an alternate long andshort dash line in FIG. 17) of the back surface 4 a from the contourposition of the back surface 4 a of the semiconductor luminous element 4is larger than 0° and is equal to/smaller than 45° and the inclined faceextends outside and upward. In FIGS. 17 and 18, the inclination θ of theinclined face 23 is 45°. Hereby, the light emanating from four sides 4 eof the semiconductor luminous element 4 can be efficiently reflectedupward.

[0176] The transparent resin 3 is always kept fixed quantity byapplication or printing. The transparent resin 3 is provided up to aposition on the inclined face 23 opposite to the side 4 e of thesemiconductor luminous element 4 in a large range having larger areathan the size of the semiconductor luminous element 4. The large rangeincludes the area 24 in which the semiconductor luminous element 4 ismounted on the lead frame 21 as shown in FIG. 17. Hereby, light radiatedfrom the semiconductor luminous element 4 can be more efficientlyconverted in color. And even if the quantity of wavelength convertingmaterial by printing and others is small, an optimum tonality can beacquired.

[0177] Referring to FIGS. 16 and 17, the locus of light will bedescribed below.

[0178] The wavelength of light radiated downward from the back surface 4a of the semiconductor luminous element 4 is converted by the wavelengthconverting material of the transparent resin 3. A part of the convertedlight is radiated toward the semiconductor luminous element 4. The otherconverted light is reflected on the wiring pattern 21 a of the leadframe 21. The reflected light is also radiated toward the semiconductorluminous element 4. This light is transmitted in the semiconductorluminous element 4 and is mixed with light directly radiated upward fromthe semiconductor luminous element 4.

[0179] The wavelength of light L22 that goes downward out of lightemanating from the four sides 4 e of the semiconductor luminous element4 is converted by wavelength converting material included in thetransparent resin 3 provided on the inclined face 23. The light L22 isreflected at an angle of reflection equal to each angle of incidencefrom four sides 4 e of the semiconductor luminous element 4. This lightis mixed with light L1 respectively outgoing in a horizontal directionfrom the four sides 4 e of the semiconductor luminous element 4 andlight L11 that goes upward.

[0180] In the case of the light equipment 1J in which the inclined face23 is provided, the light L1 that goes at right angles to the sides 4 eis reflected at an angle of 45° on the inclined face 23 having theinclination of 45° as shown in FIG. 18. The reflected light L11 goesvertically upward (at right angles to a virtual face parallel to thefront surface 4 b).

[0181] As shown in FIG. 18, differently from light L1 outgoing from thesides 4 e for example, the wavelength of light L22 which is madeoutgoing downward and the angle β of outgoing radiation of which isapproximately 30° is converted by the wavelength converting material ofthe transparent resin 3 on the inclined face 23 having the inclinationof 45°. And the light is reflected. The converted and reflected lightL23 is outgoing upward slightly near to the semiconductor luminouselement 4.

[0182] Similarly, differently from light L1 outgoing from the sides 4 e,the wavelength of light L32 which is made outgoing upward and the angleβ of outgoing radiation of which is approximately 30° is converted bythe wavelength converting material of the transparent resin 3 on theinclined face 23 having the inclination of 45° and the light isreflected. The converted and reflected light L33 is outgoing above thesemiconductor luminous element 4 slightly apart from the semiconductorluminous element 4.

[0183] Therefore, the quantity of most light L1 and L32 except lightthat goes downward from the sides 4 eis equivalent to approximately 84%of the quantity of all light outgoing from the sides 4 e. Therefore, thelight emanating made a good show in a tonality and luminance can beacquired by using the light emanating utilizing light from the foursides 4 e.

[0184] As described above, the wavelength of light outgoing from thefour sides 4 e of the semiconductor luminous element 4 is converted bythe wavelength converting material of the transparent resin 3 providedon the inclined face 23 of the lead frame 21 corresponding to theposition of the four sides 4 e of the semiconductor luminous element 4.Afterward, the light is reflected vertically upward by the inclined face23. The reflected light is mixed with direct light from thesemiconductor luminous element 4 and reflected light reflected on theinclined face 23 without being converted in a wavelength. The reflectedlight is radiated outside from the upside of the semiconductor luminouselement 4 as mixed color (for example, white light).

[0185] In FIGS. 15 to 18, the configuration is described so that thetransparent resin 13 is provided in larger area than the area 24 inwhich the semiconductor luminous element 4 is mounted on the lead frame21. However, in place of the lead frame 21 as base material on which thetransparent resin 3 is provided, a board 11 shown in FIGS. 19 and 20 anda case 7 shown in FIGS. 21 and 22 may be also used.

[0186] Embodiment 11

[0187]FIG. 19 is a partial sectional view showing an eleventh embodimentof the light equipment according to the invention. The same number isallocated to the substantially similar component to that of the lightequipment 1J equivalent to the tenth embodiment and the detaileddescription is omitted.

[0188] In light equipment 1K (1) shown in FIG. 19, a rectangular concaveportion 25 is formed on the surface of a board 11. The bottom of theconcave portion 25 forms a smooth surface 24 on which a semiconductorluminous element 4 is mounted. This surface 24 has the similar or largerarea to/than the area of the back surface 4 a of the semiconductorluminous element 4. The peripheral wall of the concave portion 25 isopposite to four sides 4 e of the semiconductor luminous element 4 andforms the similar inclined face 23 to that of the light equipment 1Jequivalent to the tenth embodiment.

[0189] Transparent resin 3 is formed in the concave portion 25 on theboard 11 by application or printing and is always kept fixed quantity.The area of the transparent resin 3 is larger than the area of the backsurface 4 a of the semiconductor luminous element 4 as shown in FIG. 19.The back surface 4 a of the semiconductor luminous element 4 is bondedon a flat surface 25 a of the concave portion 25 via the transparentresin 3 so as to be included in the transparent resin 3.

[0190] The above-mentioned light equipment 1K may also haveconfiguration that no concave portion 25 is formed in the board 11 asshown in FIG. 20. In this case, the transparent resin 3 is provided onthe board 11. The area of the transparent resin 3 is larger than thearea of the back surface 4 a of the semiconductor luminous element 4.The back surface 4 a of the semiconductor luminous element 4 is bondedon the board 11 via the transparent resin 3 so as to be included in thetransparent resin 3.

[0191] Embodiment 12

[0192]FIG. 21 is a partial sectional view showing a twelfth embodimentof the light equipment according to the invention. The same number isallocated to the substantially similar component to that of the lightequipment 1J equivalent to the tenth embodiment and the detaileddescription is omitted.

[0193] In light equipment 1L (1) shown in FIG. 21, a rectangular concaveportion 25 is formed at the bottom of a concave portion 7 a of a case 7.The bottom of the concave portion 25 forms a smooth surface 24 on whicha semiconductor luminous element 4 is mounted. This surface 24 has thesimilar or larger area to than the area of the back surface 4 a of thesemiconductor luminous element 4. The peripheral wall of the concaveportion 25 is opposite to four sides 4 e of the semiconductor luminouselement 4 and forms the similar inclined face 23 to that of the lightequipment 1J equivalent to the tenth embodiment.

[0194] Transparent resin 3 is formed on the concave portion 25 of thecase 7 by application or printing and is always kept fixed quantity. Thearea of the transparent resin 3 is larger than the area of the backsurface 4 a of the semiconductor luminous element 4 as shown in FIG. 21.The back surface 4 a of the semiconductor luminous element 4 is bondedon a flat surface 25 a of the concave portion 25 via the transparentresin so that the back surface 4 a is included in the transparent resin3.

[0195] The above-mentioned light equipment 1L may also haveconfiguration that no concave portion 25 is formed in a concave portion7 a of a case 7 as shown in FIG. 22. In this case, the transparent resin3 is provided on a flat surface 7 c of the concave portion 7 a of thecase 7. The area of the transparent resin 3 is larger than the area ofthe back surface 4 a of the semiconductor luminous element 4. The backsurface 4 a of the semiconductor luminous element 4 is bonded on theflat surface 7 c of the case 7 via the transparent resin 3 so as to beincluded in the transparent resin 3.

[0196] As described above, in the light equipment 1 equivalent to thisembodiment, the semiconductor luminous element 4 is bonded and fixed bythe transparent resin 3 in which wavelength converting material (orwavelength converting material and conductive material) is (are) mixedon base material having reflectivity (a reflective board 11, areflective lead frame 21, a reflective pattern and a reflective electricwiring pattern in the case 7). Hereby, the wavelength of light outgoingfrom the surface (the back surface 4 a, the side 4 e) except the frontsurface 4 b of the semiconductor luminous element 4 is converted by thewavelength converting material (or the wavelength converting materialand the conductive material) of the transparent resin 3. The convertedlight is transmitted in the semiconductor luminous element 4 again andis outgoing from the front surface 4 b as mixed light.

[0197] To acquire white light, a semiconductor luminous element thatemits blue light is used for the semiconductor luminous element 4. Forthe transparent resin 3, resin in which wavelength converting material(or wavelength converting material and conductive material) includingorange fluorescent pigment or orange fluorescent dye is (are) mixed isused. Hereby, blue light from the semiconductor luminous element 4itself is radiated upward the semiconductor luminous element 4. Bluelight radiated downwaard the semiconductor luminous element 4 isreflected toward the semiconductor luminous element 4 again as yellowlight converted by the wavelength converting material of the transparentresin 3. Further, blue light radiated upward the semiconductor luminouselement 4 and yellow light reflected toward the semiconductor luminouselement 4 are completely mixed and uniform white light is radiated fromthe upside of the semiconductor luminous element 4. As a result, ifwavelength converting material (a color converting member) is evenlydistributed, clearer and higher-luminance white light can be acquired.

[0198] Particularly, as shown in FIGS. 17 and 18, according to the lightequipment provided with the inclined face 23 opposite to the four sides4 e of the semiconductor luminous element 4, the wavelength of most oflight emanatings from the back surface 4 a of the semiconductor luminouselement 4 and light emanatings from the four sides 4 e of thesemiconductor luminous element 4 is converted by the wavelengthconverting material of the transparent resin 3 formed between the backsurface 4 a of the semiconductor luminous element 4 and the inclinedface 23. The most are reflected toward the semiconductor luminouselement 4. As a blue light emanating from the front surface 4 b of thesemiconductor luminous element 4 and yellow reflected light outgoingfrom the back surface 4 a and the side 4 e and converted in a wavelengthare mixed, white light can be acquired. Hereby, the light equipmentexcellent in a color tone and satisfactory in lightening, economy anddownsizing can be acquired.

[0199] As described above, the light equipment according to theinvention is used for a light source for a lamp and a display. The lightequipment is useful for a light source for a liquid crystal display, amobile telephone, portable terminal equipment, small-sized terminalequipment and others.

What is claimed is:
 1. Light equipment, comprising: transparent resinwhich is provided on the reflecting surface of base material and inwhich wavelength converting material is mixed; and a transparentsemiconductor luminous element provided on the transparent resin,wherein: the wavelength of light emitted from the back surface of thesemiconductor luminous element is converted by the wavelength convertingmaterial; the converted light is reflected on the reflecting surface;and the reflected light and light directly emitted from the frontsurface of the semiconductor luminous element are mixed and the mixedlight is radiated from the surface of the semiconductor luminouselement.
 2. Light equipment according to claim 1, wherein: conductivematerial is further mixed in the transparent resin.
 3. Light equipmentaccording to claim 1, wherein: the transparent resin is formed in largerarea than the area of the semiconductor luminous element on the basematerial; and the semiconductor luminous element is bonded and fixed onthe transparent resin on the base material.
 4. Light equipment accordingto claim 1, wherein: a concave portion is provided to the base material;the transparent resin is filled in the concave portion; and thesemiconductor luminous element is bonded and fixed on the transparentresin filled in the concave portion.
 5. Light equipment according toclaim 4, wherein: the aperture area of the concave portion is smallerthan the area of the back surface of the semiconductor luminous element.6. Light equipment according to claim 4, wherein: the inner wall of theconcave portion is opposite to the side of the semiconductor luminouselement; and the inner wall is an inclined face that extends from thebottom of the concave portion toward the aperture of the concaveportion.
 7. Light equipment according to claim 6, wherein: an anglebetween the inclined face of the concave portion and the bottom of theconcave portion is larger than 0° and is equal to or smaller than 45°.8. Light equipment according to claim 4, wherein: the aperture of theconcave portion is in the shape of light emission of the semiconductorluminous element, in a rectangular shape or in a circular shape. 9.Light equipment according to claim 4, wherein: the concave portion isprocessed and formed by etching, laser beam machining or electricaldischarge machining.
 10. Light equipment according to claim 1, wherein:the semiconductor luminous element is bonded and fixed on thetransparent resin by a transparent adhesive.
 11. Light equipmentaccording to claim 10, wherein: the semiconductor luminous element isprovided with a transparent electrode on the back surface; and thetransparent electrode is provided on an active layer formed on atransparent board.
 12. Light equipment according to claim 1, wherein:the base material is made of any of a ceramic board, a liquid crystalpolymer resin board, a glass fiber epoxy resin board, a lead frame and areflective case.
 13. Light equipment according to claim 1, wherein: thesemiconductor luminous element is made of any of InGaAlP, InGaAlN, InGaNand GaN.